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Thermally stable transparent conducting and highly infrared reflective Ga-doped ZnO thin films by metal organic chemical vapor deposition |
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| Authors: | JL ZhaoXW Sun H RyuYB Moon |
| Affiliation: | a Department of Applied Physics, College of Science, Tianjin University, 92 Weijin Road, Tianjin 300072, People’s Republic of China b School of Electrical & Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Singapore c Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749, Republic of Korea d THELEDS Co., Ltd., Yongin-si, Gyeonggi-do 449-871, Republic of Korea |
| Abstract: | Highly transparent conductive Ga-doped ZnO (GZO) thin films have been prepared on glass substrates by metal organic chemical vapor deposition. The effect of Ga doping on the structural, electrical and optical properties of GZO films has been systematically investigated. Under the optimum Ga doping concentration (∼4.9 at.%), c-axis textured GZO film with the lowest resistivity of 3.6 × 10−4 Ω cm and high visible transmittance of 90% has been achieved. The film also exhibits low transmittance (<1% at 2500 nm) and high reflectance (>70% at 2500 nm) to the infrared radiation. Furthermore, our developed GZO thin film can well retain the highly transparent conductive performance in oxidation ambient at elevated temperature (up to 500 °C). |
| Keywords: | Ga-doped ZnO (GZO) Transparent conductive oxide (TCO) Thermal stability Infrared reflective coating Metal organic chemical vapor deposition (MOCVD) |
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