Compensated back-channel TFTs in hydrogenated amorphous silicon |
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| Authors: | Shannon J.M. Gerstner E.G. |
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| Affiliation: | Sch. of Electron., Univ. of Surrey, UK; |
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| Abstract: | Compensated back-channel inverted staggered TFTs have been made in a-Si:H. Donor impurities were implanted to form a good source and drain ohmic contact followed by an acceptor implant to compensate the channel region. TFTs have been made with no degradation of channel mobility due to the implants and a leakage current between source and drain comparable with the best TFTs made using conventional etched back-channel technology. |
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