Performance improvement of c-Si solar cell by a combination of SiNx/SiOx passivation and double P-diffusion gettering treatment |
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| Authors: | Xiaoyu Chen Youwen Zhao Zhiyuan Dong Guiying Shen Yongbiao Bai Jingming Liu Hui Xie Jiangbian He |
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| Affiliation: | 1. Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;College of Materials Science and Opto-Electronic Technology, Univeristy of Chinese Academy of Sciences, Beijing 100049,China;2. Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;3. Solar Energy Technology Co., Ltd., Hohhot 010010, China |
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| Abstract: | SiNx/SiOx passivation and double side P-diffusion gettering treatment have been used for the fabrication of c-Si solar cells. The solar cells fabricated have high open circuit voltage and short circuit current after the double P-diffusion treatment. In addition to better surface passivation effect, SiNx/SiOx layer has lower reflectivity in long wavelength range than conventional SiNx film. As a consequence, such solar cells exhibit higher conversion efficiency and better internal quantum efficiency, compared with conventional c-Si solar cells. |
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| Keywords: | c-Si solar cell double diffusion SiNx/SiOx passivation |
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