Influence of oxygen doping on resistive-switching characteristic of a-Si/c-Si device

The influence of oxygen doping on resistive-switching characteristics of Ag/a-Si/p⁺-c-Si device was investigated. By oxygen doping in the growth process of amorphous silicon, the device resistive-switching performances, such as the ON/OFF resistance ratios, yield and stability were improved, which may be ascribed to the significant reduction of defect density because of oxygen incorporation. The device I-V characteristics are strongly dependent on the oxygen doping concentration. As the oxygen doping concentration increases, the Si-rich device gradually transforms to an oxygen-rich device, and the device yield, switching characteristics, and stability may be improved for silver/oxygen-doped a-Si/p⁺-c-Si device. Finally, the device resistive-switching mechanism was analyzed.