| 衬底温度对CuCrO2薄膜光电性能影响 |
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| 引用本文： | 李杨超,张铭,赵学平,董国波,严辉. 衬底温度对CuCrO2薄膜光电性能影响[J]. 纳米科技, 2010, 0(1): 29-33 |
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| 作者姓名： | 李杨超 张铭 赵学平 董国波 严辉 |
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| 作者单位： | 北京工业大学材料科学与工程学院薄膜材料实验室,北京100124 |
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| 基金项目： | 北京市教育委员会科技计划面上项目(No.KM200910005023) |
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| 摘 要： | 采用射频磁控溅射法制备了不同衬底温度的CuCrO2薄膜，通过X射线衍射、扫描电镜、紫外吸收光谱及电学性能的测量表征了薄膜样品的结构与性能，结果表明，衬底温度对CuCrO2薄膜形貌结构、光学、电学性能影响较大。当衬底温度为750℃时，薄膜为结晶态。薄膜的可见光透过率随衬底温度提高有所增加。750℃时，CuCrO2薄膜直接带隙降低到3．02eV。电导率随衬底温度提高先增加后降低，500℃时，薄膜的电导率最高，达到27．1S·cm^-1，电导率对数随温度倒数变化关系表明，CuCrO2薄膜在300K-220K温度区间内均符合半导体热激活导电规律。
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| 关 键 词： | CuCrO2薄膜 不同沉积温度 直接带隙 激活能 |
Influence of Substrate Temperature on Optical and Electrical Properties of CuCrO_2 Thin Films |
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| LI Yang-Chao,ZHANG Ming,ZHAO Xue-Ping,DONG Guo-Bo,YAN Hui. Influence of Substrate Temperature on Optical and Electrical Properties of CuCrO_2 Thin Films[J]. , 2010, 0(1): 29-33 |
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| Authors: | LI Yang-Chao ZHANG Ming ZHAO Xue-Ping DONG Guo-Bo YAN Hui |
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| Affiliation: | Laboratory of Thin Film Materials/a>;College of Materials Science and Engineering/a>;Beijing University of Technology/a>;Beijing 100124/a>;China |
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| Abstract: | A series of CuCrO2 thin films with different substrate temperature were deposited on quartz substrates by using radio frequency magnetron sputtering. The crystal structure and morphology of all films were characterized by X-ray diffraction (XRD) and scanning electron microscope (SEM). The transmittance and electrical properties of CuCrO2 films with different deposited temperature were studied. The results showed that the substrate temperature was an important factor to the crystal structure,optical and elec... |
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| Keywords: | CuCrO2 films different deposited temperature direct band gap activation energy |
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