Preparation of Co-N films by rf-sputtering |
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Authors: | Kiichi Oda Tetsuo Yoshio Kohei Oda |
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Affiliation: | (1) Research Institute for Non-Crystalline Materials, School of Engineering, Okayama University, 700 Okayama, Japan;(2) Yonago National College of Technology, 683 Yonago, Japan |
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Abstract: | Co-N films in the wide compositional range can be prepared by reactive sputtering. Co-N sputtered films consist of one or two phases, such as CoN, Co2N, Co3N, Co4N and -Co. Co4N phase with a cubic unit cell is observed, and its lattice constant isa = 0.3586 nm. The preferred orientation is observed on the Co-N films, CoN (200) plane, Co4N (1 1 1) plane and -Co (002) plane parallel to the film surface, respectively. Saturation magnetization s of Co-N sputtered film decreases from 160 to 1.7 e.m.u. g–1 with increasing content of N from 0 to 21.7 at%, and coercive forceIHc is the range of 43 to 5000e at room temperature. |
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