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An accurate two-dimensional CAD-oriented model of retrograde doped MOSFETs for improved short channel performance |
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| Authors: | Abhinav Kranti Rashmi S Haldar R S Gupta |
| Affiliation: | a Semiconductor Devices Research Laboratory, Department of Electronic Science, University of Delhi South Campus, Benito Juarez Road, New Delhi 110 021, India b Department of Physics, Motilal Nehru College, University of Delhi South Campus, New Delhi 110 021, India |
| Abstract: | An analytical CAD-oriented model for short channel threshold voltage of retrograde doped MOSFETs is developed. The model is extended to evaluate the drain induced barrier lowering parameter (R) and gradient of threshold voltage. The dependence of short channel threshold voltage and R on thickness of lightly doped layer (d) has also been analyzed in detail. It is shown that a retrograde doping profile reduces short channel effects to a considerable extent. A technique is developed to optimize the device parameters for minimizing short channel effects. The results so obtained are in close proximity with published data. |
| Keywords: | Short channel effects Threshold voltage DIBL parameter Uniform and retrograde doped MOSFETs |
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