High temperature creep in Fe-3 pct Si |
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Authors: | R. G. Stang W. D. Nix C. R. Barrett |
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Affiliation: | (1) Materials Science and Engineering, Stanford University, 94305 Stanford, Calif. |
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Abstract: | The kinetics and structure dependence of the high temperature-low stress creep of Fe-3 pct Si has been studied and compared with the predictions of current creep theories. It is shown that the steady state creep rate is diffusion controlled and exhibits a power law stress dependence in the temperature range 1393 to 1678 K and stress range 6.9×104 to 1.03×106 Pa. In this same range of experimental conditions the dislocation density present during steady state creep is essentially stress independent. It is shown that current creep theories are incompatible with the experimental results. |
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