| 激光化学气相沉积非晶硅 |
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| 引用本文： | 袁加勇,陈钰清.激光化学气相沉积非晶硅[J].浙江大学学报(自然科学版 ),1990,24(3):424-427. |
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| 作者姓名： | 袁加勇 陈钰清 |
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| 作者单位： | 浙江大学光仪系
(袁加勇，陈钰清)，浙江大学信电系
(陈曾济)，浙江大学光仪系(王颖) |
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| 摘 要： | 本文报道了CO_2激光化学气相沉积非晶硅的实验结果,硅薄膜的沉积速率与硅烷气压、基片温度和激光光强密切有关。 利用不同方法测量了硅薄膜样品的各种特性,证实了薄膜确为非晶硅。 作者也研究了激光化学沉积非晶硅的机理,并给出了理论讨论以解释实验结果。
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| 关 键 词： | 非晶硅 薄膜 激光 化学气相沉积 |
Laser Chemical Vapor Deposition of Amorphous Silicon |
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| Yuan Jiayong Chen Yuqing Chen Zhengji Wang Ying.Laser Chemical Vapor Deposition of Amorphous Silicon[J].Journal of Zhejiang University(Engineering Science),1990,24(3):424-427. |
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| Authors: | Yuan Jiayong Chen Yuqing Chen Zhengji Wang Ying |
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| Affiliation: | Department of Optical Engineering |
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| Abstract: | The experimental results on amorphous silicon growth by the process of CO2 laser chemical vapor deposition were reported. The deposition rate of silicon film strongly depends on silane pressure, substrate temperature and laser intensity.The properties of silicon film were detected by different methods, the film amorphoasness was evidenced.The mechanism of laser chemical vapor deposition of amorphous silicon was investigated and a theoretical model was adopted to explain the experimental results. |
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| Keywords: | Laser Deposition Amorphous silicon |
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