GaN-Based High-Q Vertical-Cavity Light-Emitting Diodes |
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Authors: | Tien-Chang Lu Tsung-Ting Kao Chih-Chiang Kao Jung-Tang Chu Kang-Fan Yeh Li-Fan Lin Yu-Chun Peng Hung-Wen Huang Hao-Chung Kuo Shing-Chung Wang |
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Affiliation: | Nat. Chiao Tung Univ., Hsinchu; |
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Abstract: | We report a fabrication and demonstration of a GaN-based high-Q vertical-cavity light-emitting diode (VCLED). The GaN VCLED is composed of a 25-pair high-reflectivity (98%) GaN/AlN distributed Bragg reflector (DBR), an eight-pair SiO2/Ta2O5 dielectric DBR (99%), and a three-lambda optical thickness InGaN/GaN active region. It shows a very narrow linewidth of 0.52 nm, corresponding to a cavity Q -value of 895 at a driving current of 10 mA and a dominant emission peak wavelength at 465.3 nm. In addition, this VCLED emission linewidth continues to decrease with an increasing injection current, suggesting a possible realization of GaN-based vertical-cavity surface emitting lasers. |
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