Short-channel single-gate SOI MOSFET model |
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Authors: | Suzuki K. Pidin S. |
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Affiliation: | Fujitsu Labs. Ltd., Atsugi, Japan; |
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Abstract: | The authors derive an analytical model for threshold voltage for fully depleted single-gate silicon-on-insulator (SOI) MOSFETs taking into consideration the two-dimensional effects in both SOI and buried-oxide layers. Their model is valid for both long- and short-channel SOI MOSFETs and demonstrates the dependence of short-channel effects on the device parameters of channel-doping concentration, gate oxide, SOI, and buried-oxide thickness. It reproduces the numerical data for sub-0.1-/spl mu/m gate-length devices better than previous models. |
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