| Growth of Strained Si1－xGex Layer by UV/UHV/CVD |
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| 引用本文： | Hu Huiyong,Zhang Heming,Dai Xianying,Li Kaicheng,Wang Wei,Zhu Yonggang,Wang Shunxiang,Cui Xiaoying,and Wang Xiyuan. Growth of Strained Si1－xGex Layer by UV/UHV/CVD[J]. 半导体学报, 2005, 26(4): 641-644 |
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| 作者姓名： | Hu Huiyong Zhang Heming Dai Xianying Li Kaicheng Wang Wei Zhu Yonggang Wang Shunxiang Cui Xiaoying and Wang Xiyuan |
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| 作者单位： | [1]西安电子科技大学微电子研究所宽禁带半导体材料与器件教育部重点实验室,西安710071 [2]国家模拟电路实验室,重庆400060 |
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| 基金项目： | 国家部委预研基金 , 国家重点实验室基金 |
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| 摘 要： | Strained Si1－xGex and Si materials are successfully grown on Si substrate by ultraviolet light chemical vapor deposition under ultrahigh vacuum at a low substrate temperature of 450℃ and 480℃，respectively.At such low temperature,autodoping effects from the substrate and interdiffusion effects at each interface could be suppressed efficiently.The strained Si1－xGex and multilayer Si1－xGex /Si structures are examined by X-ray diffraction,SMIS,etc.,and it is found that the materials have good crystallinity and the rising and falling edges are steep.The technique has a capability of growing highquality Si1－xGex /Si strained layers.
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| 关 键 词： | Si1－xGex；ultrahigh vacuum ultraviolet light chemical vapor deposition |
Growth of Strained Si1-xGex Layer by UV/UHV/CVD |
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| Hu Huiyong,Zhang Heming,Dai Xianying,Li Kaicheng,Wang Wei,Zhu Yonggang,Wang Shunxiang,Cui Xiaoying,Wang Xiyuan. Growth of Strained Si1-xGex Layer by UV/UHV/CVD[J]. Chinese Journal of Semiconductors, 2005, 26(4): 641-644 |
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| Authors: | Hu Huiyong Zhang Heming Dai Xianying Li Kaicheng Wang Wei Zhu Yonggang Wang Shunxiang Cui Xiaoying Wang Xiyuan |
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| Abstract: | |
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| Keywords: | Si_ 1-xGe_x ultrahigh vacuum ultraviolet light chemical vapor deposition |
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