射频晶体管3DG2714基极电阻R_(bb’)的分析与研究

射频晶体管具有高的特征频率fT,高的功率增益GP。为此在工程上多采用浓硼扩散形成嫁接基区。尽可能减少基极电阻Rbb’,同时采用梳状结构电极,浅结扩散,小的结面积等工艺,提高fT,从而双方面提高功率增益GP。文章以该公司生产的射频晶体管3DG2714为例,分析了发射结下基区部分电流流动状态,合理计算了这部分的基极电阻Rb1,分析了发射极与基极之间淡硼扩散区的电流流动状态,合理计算了这部分的基极电阻Rb2,忽略了两个影响极小的电阻,计算了总的基极电阻Rbb’。为减小基极电阻提高功率增益的射频晶体管设计制造提供了依据。

Analysis and Research of RF Transistor 3DG2714 Base Resistance Rbb,

RF transistor has high characteristic frequencyfT and high power gain Gp. Engineering always use thick boron diffusion to perform base region. To minimize the base resistance Rbb,, using comb-like electrodes at the same time, shallow junction proliferation, small junction area and other technology to improverT, improving power gain Gp in two sides. The article takes RF transistor 3DG2714 producing by company for example, analyz- ing the current flow state of the base region under emitter. The article also calculates the base resistance Rbl and analyzes thin boron diffused areas of current flow state between the emitter and the base. It calculates the base resistance Rb2, ignoring the resistance of the two resistance Rbb, which have minimal impact to the total calculation. In order to reduce base resistance for increasing the power gain RF transistor providing the basis for design and manufacture.