背照式InGaN紫外探测器的制备与数值模拟

研究了背照式InGaN p-i-n结构的紫外探测器的制备与数值模拟.通过低压金属有机化学气相沉积(MOCVD)方法生长p-GaN/i-InGaN/n-GaN外延片,采用标准的Ⅲ-Ⅴ族器件制备工艺,成功制备出p-i-n结构的InGaN紫外探测器.探测器台面半径为30 μm,在-5V偏压下暗电流为-6.47×10 1 2 A,对应的电流密度为2.29×10-7 A/cm2.该探测器响应波段为360～380 nm,在371 nm处达到峰值响应率为0.21 A/W,对应的外量子效率为70％,内量子效率为78.4％.零偏压下,优值因子R0A=5.66×107 Ω·cm2,对应的探测率D* =2.34×1013 cm·Hz1/2·W-1.同时,利用Silvaco TCAD软件进行数值模拟,响应率曲线仿真值与实验值拟合较好.

Fabrication and Numerical Simulation of Back-Illuminated InGaN Ultraviolet Photodetector

The fabrication and numerical simulation of the ultraviolet photodetector with the back-illuminated InGaN p-i-n structure was studied in this paper.The p-GaN/i-InGaN/n-GaN epitaxial wafers were grown with the low-pressure metal organic chemical vapor deposition (MOCVD) method.The InGaN ultraviolet photodetector with p-i-n structure was fabricated by the standard Ⅲ-Ⅴ group device fabrication processes.The mesa radius of the photodetector was 30μm,the dark current was-6.47×10-12 A at the bias of-5 V and the current density was 2.29× 10-7 A/cm2.The spectral response band was achieved in the 360～380 nm and the peak responsivity was 0.21 A/W at 371 nm,the corresponding external quantum efficiency and the internal quantum efficiency were 70％ and 78.2％,respectively.The R0A value was up to 5.66× 107 Ω · cm2 at the zero bias,and the corresponding detection rate D* was 2.34× 1013 cm · Hz1/2 · W-1.In addition,the photodetector was numerical simulated by Silvaco TCAD software,the spectral response curve was in good agreement with the experimental result.