首页 | 本学科首页   官方微博 | 高级检索  
     

10Gb/s光接收机跨阻前置放大器芯片设计研究
引用本文:李久,何进,童志强,黄启俊,常胜,王豪.10Gb/s光接收机跨阻前置放大器芯片设计研究[J].半导体光电,2017,38(4):562-565.
作者姓名:李久  何进  童志强  黄启俊  常胜  王豪
作者单位:武汉大学物理科学与技术学院,武汉,430072;武汉大学物理科学与技术学院,武汉,430072;武汉大学物理科学与技术学院,武汉,430072;武汉大学物理科学与技术学院,武汉,430072;武汉大学物理科学与技术学院,武汉,430072;武汉大学物理科学与技术学院,武汉,430072
基金项目:国家自然科学基金项目(61204096,61404094); 中国博士后科学基金项目(2012T50688); 中央高校基本科研项目(2042015kf0174,2042014kf0238); 湖北省自然科学基金项目(2014CFB694); 江苏省科学基金项目(BK20141218);
摘    要:采用0.18 μm BiCMOS工艺设计并实现了一种高增益、低噪声、宽带宽以及大输入动态范围的光接收机跨阻前置放大器.在寄生电容为250 fF的情况下,采用全集成的四级放大电路,合理实现了上述各项参数指标间的折中.测试结果表明:放大器单端跨阻增益为73 dB,-3 dB带宽为7.6 GHz,灵敏度低至-20.44 dBm,功耗为74 mW,最大差分输出电压为200 mV,最大输入饱和光电流峰-峰值为1 mA,等效输入噪声为17.1 pA/√Hz,芯片面积为800 μ.m×950μm.

关 键 词:跨阻放大器  光接收机  等效输入噪声电流谱密度  BiCMOS工艺
收稿时间:2016/12/30 0:00:00

Study on Design of the Transimpedance Preamplifier Chip for 10Gb/s Optical Receiver
LI Jiu,HE Jin,TONG Zhiqiang,HUANG Qijun,CHANG Sheng,WANG Hao.Study on Design of the Transimpedance Preamplifier Chip for 10Gb/s Optical Receiver[J].Semiconductor Optoelectronics,2017,38(4):562-565.
Authors:LI Jiu  HE Jin  TONG Zhiqiang  HUANG Qijun  CHANG Sheng  WANG Hao
Abstract:A high gain,low noise,wide bandwidth and large input dynamic range transimpedance amplifier was designed and implemented by using 0.18μm BiCMOS technology.With a parasitic capacitance of 250 fF,the main amplifying circuit,two-stage differential amplifier circuit and output buffer circuit structure were used to realize the good tradeoff between gain,bandwidth,noise and dynamic range.The testing results indicated that the single end transimpedance gain was 73 dB,the-3 dB bandwidth was 7.6 GHz,the sensitivity was as low as -20.44 dBm and power consumption was 74 mW.The maximum differential output voltage was 200 mV,the maximum input saturated photocurrent 1 mA,the equivalent input noise was 17.1 pA/√Hz and the die size was as small as 800 μm×950μm.
Keywords:transimpedance amplifier  optical receiver  equivalent input current noise spectral density  BiCMOS technology
本文献已被 万方数据 等数据库收录!
点击此处可从《半导体光电》浏览原始摘要信息
点击此处可从《半导体光电》下载全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号