DBRTD直流特性的水动力学模拟

利用ISE软件的水动力学模型对不同材料结构的AlAs／GaAs／inGaAs双势垒共振隧穿二极管（DBRTD）直流特性进行了模拟。当势垒厚度、势垒高度、子阱厚度、间隔层厚度、掺杂浓度改变时。可以观察到DBRTD直流特性也随之改变。采用薄的子阱厚度、高的掺杂浓度以及恰当的间隔层厚度、势垒厚度和高度，可以提高RTD器件的峰谷电流比（PVCR）和峰电流密度，从而满足实际应用的需要。

Physics-Based Hydrodynamic Simulation of Direct Current Characteristics in DBRTD

Direct current (DC) characteristics of AlAs/GaAs/InGaAs double barriers resonant tunneling diodes (DBRTDs) are simulated under different material structures parameters by hydrodynamic model of ISE software. With different barrier width, barrier height, sub-well width, spacer width and n-doping concentration, the changes of DC characteristics of DBRTDs are observed and analyzed. In order to achieve high peak-valley current ratio (PVCR) and peak current density in term of application consideration, it is necessary to adopt thin sub-well width and high n-doping concentration as well as other appropriate parameters including spacer width, barrier width and height in the design of DBRTDs.