CMP系统中抛光头与抛光台运动关系分析

目前半导体制造技术已经进入0.13μm、300mm时代,随着硅片尺寸的增大以及特征线宽的减小,作为目前硅片超精密平坦化加工的主要手段-化学机械平坦化,已经成为IC制造技术中不可缺少的技术。介绍了在化学机械抛光过程中,可以通过抛光头与抛光台运动速度关系优化配置,降低晶片表面不均匀度,从而更好地实现晶片局部和全局平坦化。

Kinematic Relationship between Polishing Head and Polishing Table in CMP System

Now semiconductor manufacturing technology has come into the era of 0.13μm and 300 mm. Chemical Mechanical Polishing (CMP) is the most important method to make precision planar technology,as the size of wafer becomes bigger and the minimum feature size of microelectronic devices becomes smaller,and has becomes the necessary technology of IC. This paper introduces that we can reduce Within wafer nonuniformity (WIWNU) to achieve part and full planarization by distributing the speed of polishing head and polishing table in CMP system.