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Characterization of phosphorus oxinitride (PON) gate insulators for InP metal-insulator-semiconductor devices |
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| Authors: | H. Hbib O. Bonnaud M. Gauneau L. Hamedi R. Marchand A. Quemerais |
| Affiliation: | aGroupe de Microélectronique et de Visualisation (GMV), UPRESA au CNRS 6076, Université de Rennes I, Campus de Beaulieu, 35042 Rennes Cédex, France bFrance Telecom CNET Centre Lannion B Département PCO. 2, Avenue Marzin, 22307 Lannion Cédex, France cDépartement de Physique, Faculté des Sciences et Techniques Saïss, Fès, Morocco dLaboratoire des Verres et Céramiques, URA CNRS 1496 Université de Rennes I, Campus de Beaulieu, 35042 Rennes Cédex, France eLaboratoire de Spectroscopie du Solide et d'Electronique Quantique, URA CNRS 1202, Université de Rennes I, Campus de Beaulieu, 35042 Rennes Cédex, France |
| Abstract: | A new gate-insulating film consisting of phosphorus oxinitride (PON) was formed on an (n)InP surface by vapour transport technique. The substrate temperature was in the range of 280–350°C. The deposited films were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS). The interfacial properties of phosphorus oxinitride/(n)InP metal-insulator-semiconductor were investigated. The minimum value of the interface states density distribution (Dit), evaluated from high-frequency capacitance-voltage (C-V) measurement was 1.2 × 1011 eV−1 cm−2 at about 0.48 eV below the conduction band edge of Inp. |
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