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Electrodeposition and Characterization of ZnO Thin Films
作者姓名:HUANG  Yan-wei  YAO  Ning  ZHANG  bing-lin
作者单位:Material Physics Laboratory of Education Ministry of China, Department of Physics of Zhengzhou University, Zhengzhou 450052, CHN
基金项目:Foundation item: Science and Technology Foundation of Education Ministry of China(205091)
摘    要:Thin films of ZnO were electrodeposited from an aqueous solution of Zn(NO3 )2 on indium tin oxide(ITO)-covered glass substrate. The analysis of X-ray diffraction(XRD) and scanning electron micrograph (SEM) indicated that the obtained ZnO films had a compact hexagonal wurtzite type structure with preferable (002) growth direction. A sharp near-UV emission peak located at 380 nm and a strong orange-red emission peak located at 593 nm were observed in the photoluminescence, when excited with 325 nm wavelength at room temperature. Then the prepared ZnO films were introduced as anode phosphors into the field emission test. It was found that orange-red cathode-luminescence was observed and the luminescent brightness was enhanced by annealing. When annealing temperature increased about 600 ℃, the photoluminescence with peak of 531 nm and the green cathode-luminescence were observed. The tests showed that the brightness of about 2 × 102 cd/m^2 was obtained at electric field of 2 V/μm for annealed sample. The results revealed that the film could be a good kind of low-voltage drived cathode-luminescence phosphor.

关 键 词:电极淀积  氧化锌薄膜  光激发光  凝聚态
文章编号:1007-0206(2007)03-0210-05
收稿时间:2006/12/26
修稿时间:2006-12-262007-04-26

Electrodeposition and Characterization of ZnO Thin Films
HUANG Yan-wei YAO Ning ZHANG bing-lin.Electrodeposition and Characterization of ZnO Thin Films[J].Semiconductor Photonics and Technology,2007,13(3):210-214.
Authors:HUANG Yan-wei  YAO Ning  ZHANG bing-lin
Abstract:Thin films of ZnO were electrodeposited from an aqueous solution of Zn(NO3)2 on indium tin oxide(ITO)-covered glass substrate. The analysis of X-ray diffraction(XRD) and scanning electron micrograph(SEM) indicated that the obtained ZnO films had a compact hexagonal wurtzite type structure with preferable (002) growth direction. A sharp near-UV emission peak located at 380 nm and a strong orange-red emission peak located at 593 nm were observed in the photoluminescence, when excited with 325 nm wavelength at room temperature. Then the prepared ZnO films were introduced as anode phosphors into the field emission test. It was found that orange-red cathode-luminescence was observed and the luminescent brightness was enhanced by annealing. When annealing temperature increased about 600 ℃, the photoluminescence with peak of 531 nm and the green cathode-luminescence were observed. The tests showed that the brightness of about 2×102 cd/m2 was obtained at electric field of 2 V/μm for annealed sample. The results revealed that the film could be a good kind of low-voltage drived cathode-luminescence phosphor.
Keywords:electrodeposition  ZnO thin films  photoluminescence  cathode-luminescence  field emission  phosphor
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