采用CoSi2 SALICIDE结构CMOS/SOI器件辐照特性的实验研究

讨论了ＣｏＳｉ２ＳＡＬＩＣＩＤＥ结构对ＣＭＯＳ／ＳＯＩ器件和电路抗γ射线总剂量辐照特性的影响。通过与多晶硅栅器件对比进行的大量辐照实验表明，ＣｏＳｉ２ＳＡＬＩＣＩＤＥ结构不仅可以降低ＣＭＯＳ／ＳＯＩ电路的源漏寄生串联电阻和局域互连电阻，而且对ＳＯＩ器件的抗辐照特性也有明显的改进作用。

Radiation Characteristics of Cobalt SALICIDE CMOS/SOI Devices

The total dose radiation characteristics of CMOS/SOI devices with CoSi-2 SALICIDE in this paper we presented. Various SOI devices, such as with or without CoSi-2, are applied during irradiation in order to define the better radiation hardened process for SOI MOSFET and ring oscillator. As the experimental results show, the application of Co SALICIDE on SOI CMOS circuits not only reduce the source/drain series resistance and local interconnection resistance, but also improve obviously the SOI radiation hardness properties in terms of threshold voltage shift, junction leakage and CMOS ring oscillator propagation delay. CoSi-2 SALICIDE technology is one of the ideal radiation hardened technology of CMOS/SOI circuits.