Room-temperature continuous-wave 1.55 /spl mu/m GaInNAsSb laser on GaAs |
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| Authors: | Bank SR Bae HP Yuen HB Wistey MA Goddard LL Harris JS |
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| Affiliation: | Solid State & Photonics Lab, Stanford Univ., CA, USA; |
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| Abstract: | The first low-threshold 1.55 /spl mu/m lasers grown on GaAs are reported. Lasing at 1.55 /spl mu/m was observed from a 20/spl times/2400 /spl mu/m as-cleaved device with a room-temperature continuous-wave threshold current density of 579 A/cm/sup 2/, external efficiency of 41%, and 130 mW peak output power. The pulsed threshold current density was 550 A/cm/sup 2/ with >600 mW peak output power. |
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