Semimetal/semiconductor nanocomposites for thermoelectrics |
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Authors: | Lu Hong Burke Peter G Gossard Arthur C Zeng Gehong Ramu Ashok T Bahk Je-Hyeong Bowers John E |
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Affiliation: | Materials Department, University of California-Santa Barbara, CA 93106–5050, USA. luhong@engineering.ucsb.edu |
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Abstract: | In this work, we present research on semimetal-semiconductor nanocomposites grown by molecular beam epitaxy (MBE) for thermoelectric applications. We study several different III-V semiconductors embedded with semimetallic rare earth-group V (RE-V) compounds, but focus is given here to ErSb:In(x)Ga(1?x)Sb as a promising p-type thermoelectric material. Nanostructures of RE-V compounds are formed and embedded within the III-V semiconductor matrix. By co-doping the nanocomposites with the appropriate dopants, both n-type and p-type materials have been made for thermoelectric applications. The thermoelectric properties have been engineered for enhanced thermoelectric device performance. Segmented thermoelectric power generator modules using 50 μ m thick Er-containing nanocomposites have been fabricated and measured. Research on different rare earth elements for thermoelectrics is discussed. |
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