1040 nm vertical external cavity surface emitting laser based on inGaAs quantum dots grown in Stranski-Krastanow regime

Quantum dots grown by metal organic vapour phase epitaxy in the Stranski-Krastanow regime are succesfully implemented for the first time as active media in optically pumped vertical external cavity surface emitting lasers. To optimise the gain the quantum dots are engineered to match the excited state luminescence to the cavity resonance. Room temperature continuous-wave operation at 1040 nm wavelength is demonstrated. An output power of 280 mW is achieved, limited only by the onset of thermal rollover. The differential conversion efficiency is 6.7%.