Structural and optical properties of La-doped ZnO films prepared by magnetron sputtering |
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| Affiliation: | 1. Department of Physics, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, PR China;2. The College of Materials Science and Engineering, Beijing University of Technology, Beijing 100022, PR China;1. Dept. of Chemistry & Central Research Laboratory, Bharath Institute of Higher Education and Research (BIHER), Bharath University, Chennai, 600073, Tamil Nadu, India;2. PG & Research Dept. of Chemistry, Bishop Heber College, Tiruchirappalli, 620017, Tamil Nadu, India;3. Dept. of Chemistry, PSG College of Technology, Coimbatore, 641004, India;4. Faculty of Applied Sciences, Ton Duc Thang University, Ho Chi Minh City, 70000, Viet Nam;5. IJNUTM Cardiovascular Engineering Centre, Dept. of Clinical Sciences, Faculty of Biosciences and Medical Engineering, Universiti Teknologi Malaysia, Johor Bahru, Malaysia;6. UNESCO UNISA Africa Chair in Nanosciences & Nanotechnology, College of Graduate Studies, University of South Africa, Muckleneuk Ridge, PO Box 392, Pretoria, South Africa;7. Nanosciences African Network (NANO-AFNET), iThemba LABS-National Research Foundation, 1 Old Faure Road, Somerset West, PO Box: 722, Cape Town, 7129, South Africa;8. Dept. of Textile & Chemical Engineering & P. G. Programme in Mechanical Engineering, Centre of Technology, Federal University of Rio Grande do Norte, Natal, Brazil;9. School of Physics and Astronomy, Nottingham Nanotechnology and Nanoscience Center, University of Nottingham, Nottingham, NG7 2RD, United Kingdom;1. Unité de physique des dispositifs à semi–conducteurs, Faculté des sciences de Tunis, Université de Tunis El Manar, 2092 Tunis, Tunisia;2. Laboratoire Matériaux, Organisation et Propriétés, Université de Tunis El Manar, Tunis 2092, Tunisia;1. SSN College of Engineering, Kalavakkam, 603110 Chennai, Tamilnadu, India;2. Department of Physics, Periyar University, Salem 636011, Tamilnadu, India |
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| Abstract: | La-doped ZnO films were prepared by RF magnetron sputtering using different composition powder compacted targets (0, 1, 2, 3 and 5 at.%). All films show a preferred c-axis growth orientation. Furthermore, the (002) diffraction peak shifts to a small angle and the full-width at half-maximum augments with increasing La concentration up to 2 at.%, which indicate that a small quantity of La atoms are incorporated into the ZnO lattice. The average transmittance in the visible range is over 80%, and a blue shift of the absorption edge is observed. With increasing La concentration, the band gap of ZnO films evaluated by the linear fitting linearly increases from 3.270 to 3.326 eV. In the photoluminescence spectra, a strong violet emission peak and a weak green emission band can be observed. The former is due to the electron transition between the defect energy levels, associated with the interfacial traps existing at the ZnO grain boundaries, and valence band. The latter could be ascribed to crystal defects related to oxygen vacancies. |
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