The effect of LaNiO3 buffer layer thickness on the electric properties of Pb(Zr0.53Ti0.47)O3 thin films deposited on titanium foils |
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| Affiliation: | 1. Department of Physics and Astrophysics, University of Delhi, Delhi110007, India;2. Solid State Physics Laboratory, DRDO, Lucknow Road, Timarpur, Delhi110054, India;1. School of Materials Science and Engineering, Changzhou University, Changzhou, Jiangsu 213016, China;2. Department of Applied Physics and Materials Research Centre, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong;3. Department of Physics, Nanjing University, Nanjing, Jiangsu 210000, China;1. Pitesti University, Faculty of Mechanics and Technology, 110040 Pitesti, Arges, Romania;2. National Institute for Lasers, Plasma and Radiation Physics, 077125 Magurele, Romania;3. National Institute of Materials Physics, 077125 Magurele, Ilfov, Romania;4. University Politehnica of Bucharest, Faculty of Applied Chemistry and Material Science, 011061 Bucharest, Romania;5. Technical University “Gheorghe Asachi” of Iasi, Faculty of Mechanics, 700050, Iasi, Romania |
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| Abstract: | Sol-gel derived Pb(Zr0.53Ti0.47)O3 (PZT) thin films were prepared on LaNiO3 (LNO) buffered titanium foils. The effect of LNO buffer layer thickness on the electric properties of PZT thin films was investigated. The room temperature dielectric constant of PZT thin films increased with increasing LNO thickness. The remnant polarization of PZT thin films on 150 and 250 nm LNO was about 20 uC/cm2. Curie temperatures of PZT thin films were 310, 330 and 340 °C for LNO of 250, 150 and 50 nm respectively. The current-voltage characteristics of PZT thin films were examined for different LNO buffer layer thicknesses, and the space charge limited conduction model was followed in PZT thin films on 50 nm LNO. |
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