Microstructure and dielectric properties of CaCu3Ti4O12 ceramic |
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| Affiliation: | 1. School of Material and Mineral Resources, Engineering Campus, Universiti Sains Malaysia, 14300 Nibong Tebal, Penang, Malaysia;2. School of Electrical and Electronic, Engineering Campus, Universiti Sains Malaysia, 14300 Nibong Tebal, Penang, Malaysia;3. Physics Department, Universiti Teknologi Malaysia, 81310 Skudai, Johor, Malaysia;1. Department of Materials Science and Engineering, Chonnam National University, 300 Yongbong-dong, Bukgu, Gwangju 500-757, Republic of Korea;2. Department of Applied Chemistry, Indian Institute of Technology, Banaras Hindu University, Varanasi 221005, UP, India;3. Department of Ceramic Engineering, Indian Institute of Technology, Banaras Hindu University, Varanasi 221005, UP, India;1. State Key Laboratory of Advanced Technologies for Comprehensive Utilization of Platinum Metals, Kunming Institute of Precious Metals, Kunming, 650106, PR China;2. Aerospace Science and Industry Wuhan Magnetism-electron Co., Ltd, Wuhan, 430074, PR China |
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| Abstract: | CaCu3Ti4O12 (CCTO) was prepared by the solid state technique. The sample was calcined at 900 °C/12 h and sintered at 1050 °C/24 h, then subjected to XRD to ensure CCTO formation. The microstructure was observed by SEM. XRD results identified both samples as single phase CCTO, whereas the microstructure shows abnormal grain growth and large pores. Sintering was studied in the temperature range of 950–1050 °C for 3–12 h. Increasing sintering temperature enhances the density and secondary formation of Cu2O. A clear grain boundary and dense microstructure were observed. The results show that the sample sintered at 1040 °C/10 h yields a clearly uniform grain size with the highest εr (33,210). |
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