Inner potential fluctuation in SiC nanowires with modulated interior structure |
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| Affiliation: | 1. Department of Physics, Graduate School of Science, Osaka University, 1-1, Machikaneyama, Toyonaka, Osaka 560-0043, Japan;2. National Institute of Advanced Industrial Science and Technology (AIST) KANSAI, 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577, Japan;1. State Key Laboratory of Multi-phase Complex Systems, Institute of Process Engineering, Chinese Academy of Science (CAS), China;2. University of Chinese Academy of Sciences (UCAS), Beijing 100049, China;1. State Key Laboratory of Solidification Processing, Carbon/Carbon Composites Research Center, Northwestern Polytechnical University, Xi''an 710072, China;2. School of Mechatronic Engineering, Northwestern Polytechnical University, Xi''an 710072, China;1. Department of Physics, Institute of Microsystem, Key Laboratory for Photovoltaic Materials of Henan Province, Henan University, Kaifeng 475004, China;2. National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026, China;3. Shanghai Synchrotron Radiation Facility, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201204, China;1. Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Ministry of Education, Taiyuan 030024, PR China;2. College of Science, North University of China, Taiyuan 030051, PR China;3. College of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan 030024, PR China;1. College of Materials Science & Technology, Shaanxi University of Science & Technology, Xi’an, Shaanxi 710021, China;2. College of Materials Science & Engineering, Shenzhen University, Shenzhen 518060, China;3. Shenzhen Key Laboratory of Special functional Materials, Shenzhen, 518060, China |
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| Abstract: | SiC nanowires with modulation in diameter and interior structure along the growth direction have been fabricated via a self-organized process. The SiC nanowires, the basic structure of which is zincblende-type, contain many bunching stacking faults along the growth direction inhomogeneously. In other words, the SiC nanowires consist of alternate stacks of the perfect crystal and the defective regions. We have found the difference in the values of mean inner potential between the perfect crystal and the defective regions by means of electron holography. |
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