Room temperature passive mode-locked laser based on InAs/GaAs quantum-dot superlattice |
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| Authors: | Mikhail Sobolev Mikhail Buyalo Idris Gadzhiev Ilya Bakshaev Yurii Zadiranov Efim Portnoi |
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| Affiliation: | 1.Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia |
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| Abstract: | Passive mode-locking is achieved in two sectional lasers with an active layer based on superlattice formed by ten layers of quantum dots. Tunnel coupling of ten layers changes the structural polarization properties: the ratio between the transverse electric and transverse magnetic polarization absorption coefficients is less by a factor of 1.8 in the entire electroluminescence spectrum range for the superlattice. |
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| Keywords: | Mode-locking Laser Polarization Quantum dots Superlattice In(Ga) As/GaAs |
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