A new method for preparation of direct bonding copper substrate on Al2O3 |
| |
| Affiliation: | 1. School of Microelectronics, Fudan University, Shanghai 200093, China;2. School of Power and Mechanical Engineering, Wuhan University, Wuhan 430070, China;3. School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China;1. Key Laboratory of Advanced Ceramics and Machining Technology of Ministry of Education, Tianjin University, Tianjin, 300072, China;2. School of Materials Science and Engineering, Tianjin University, Tianjin, 300072, China;3. Department of Materials Science and Engineering, Virginia Tech, Blacksburg, 24061, USA;1. National Institute of Advanced Industrial Science and Technology (AIST), Nagoya 463-8560, Japan;2. Ceramic Research Dept., Denka Co., Ltd. Omuta-shi, Fukuoka prefecture 836-8510, Japan |
| |
| Abstract: | The oxygen content is usually difficult to control in direct bonding copper process. In this study a new method for preparation of direct bonding copper on alumina ceramic substrates was realized. 96% Al2O3 ceramic substrates were first oxidized by pasting a thin layer of Cu2O and firing at 1150 °C in air. Then copper foil was bonded to the substrate by heating to 1070 °C in pure N2 atmosphere. Microstructure and composition of the interface between the copper and Al2O3 ceramic were analyzed. The XRD and EDS results show that an interphase of CuAlO2 was formed and a eutectic transformation between oxygen and copper took place at the interface of the copper and the ceramic substrate. The interface was much thicker than the traditionally bonded substrates, which resulted in a better bonding strength. The directly bonded copper alumina substrate samples showed no evidence of de-bonding after 50 thermal cycles comprising quenching from 220 °C to room temperature. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
