Growth of p-type ZnO thin films by using an atomic layer epitaxy technique and NH3 as a doping source |
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| Affiliation: | 1. Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnicka 10, 16253 Prague 6, Czech Republic;2. Czech Technical University in Prague, Faculty of Nuclear Sciences and Physical Engineering Trojanova 13, 120 00 Prague 2, Czech Republic;1. Hubei Key Laboratory of Critical Zone Evolution, School of Geography and Information Engineering, China University of Geosciences, Wuhan 430074, China;2. School of Resources and Environment, Anhui Agricultural University, Hefei 230036, Anhui, China |
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| Abstract: | Nitrogen-doped, p-type ZnO thin films have been grown successfully on sapphire (0001) substrates by atomic layer epitaxy (ALE) using Zn(C2H5)2 Diethylzinc, DEZn], H2O and NH3 as a zinc precursor, an oxidant and a doping source gas, respectively. The lowest electrical resistivity of the p-type ZnO films grown by ALE was 210 Ω cm with a hole concentration of 3.41 × 1016 cm− 3. Low temperature-photoluminescence analysis results support that the nitrogen ZnO after annealing is a p-type semiconductor. Also a model for change from n-type ZnO to p-type ZnO by annealing is proposed. |
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