The crystal structures and dielectric properties of Bi2O3 doped SrBi2Ta2O9 ceramics |
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| Affiliation: | 1. Department of Electrical Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan, ROC;2. Department of Chemical and Materials Engineering, National University of Kaohsiung, Kaohsiung, Taiwan, ROC;3. Department of Electrical Engineering, Cheng-Shiu University, Kaohsiung, Taiwan, ROC;4. Department of Applied Physics, National University of Kaohsiung, Kaohsiung, Taiwan, ROC;1. Shaanxi Key Laboratory of Photoelectric Functional Materials and Devices, School of Materials and Chemical Engineering, Xi’an Technological University, Xi’an 710032, China;2. Northwest Institute For Non-ferrous Metal Research, Xi’an 710016, China;1. Federal University of Rondônia, Department of Physics of Ji-Paraná - RO, 78960-000, Brazil;2. Federal University of Mato Grosso - UFMT, Department of Chemistry, Cuiaba, MT, Brazil;3. I3N and Physics Department, Aveiro University, Campus Universitário de Santiago, Aveiro, Portugal;4. Tele Informatics Engineering Department (DETI), Federal University of Ceará, UFC, 60455-760 Fortaleza, CE, Brazil;5. Institute of Physics, LACANM, UFMT, 78060-900 Cuiabá, MT, Brazil;1. Department of Physics and Engineering Physics, Tulane University, New Orleans, LA 70118, USA;2. Department of Physics and Institute of Functional Nanomaterials, University of Puerto Rico, San Juan, PR 00936, USA;3. Department of Physics, Oakland University, Rochester, MI 48309-4401, USA;4. Department of Materials and Ceramic & CICECO, University of Aveiro, 3810-193 Aveiro, Portugal;5. Department of Physics, Central University of Rajasthan, Bandar Sindri, Kishangarh 305801, Rajasthan, India;1. Electroceramics Research Lab, GVM Girls College, Sonepat 131001, India;2. Department of Physics, Hindu College, Sonepat 131001, India;3. Solid State Physics Laboratory, Lucknow Road, Delhi 110054, India;4. School of Physics & Materials Science, Thapar University, Patiala 147004, India;5. Department of Physics, GVM Girls College, Sonepat 131001, India;1. Facultad de Física-Instituto de Ciencia y Tecnología de Materiales, Universidad de La Habana, San Lázaro y L, Vedado, La Habana 10400, Cuba;2. University of Picardie Jules Verne, LPMC, 80039 Amiens Cedex, France;3. University of Nîmes, Department of Sciences and Arts, 30021 Nimes Cedex 01, France;4. ICGM (UMR CNRS no. 5253), C2M, 34095 Montpellier Cedex 05, France |
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| Abstract: | Ferroelectric materials with Bi-layered structure such as SrBi2Ta2O9 composition with excess x wt.% Bi2O3 (x = 0, 2, and 4) are investigated as the main composition, the effect of excess Bi2O3 content and sintering temperatures on the crystal structure and dielectric characteristics of SrBi2Ta2O9 ceramics are developed. Even 1280 °C is used as the sintering temperature of stoichiometry SrBi2Ta2O9 composition, the X-ray diffraction patterns will show that the SrBi2Ta2O9 phase is coexisted with the raw material of Ta2O5 and the secondary phases of SrBi2O4 and BiTaO4. For SrBi2Ta2O9 composition with excess 2 wt.%- or 4 wt.%-Bi2O3-doped and sintered at 1040 °C, the Ta2O5, SrBi2O4, and BiTaO4 phases are eliminated and only the SrBi2Ta2O9 phase is observed in the X-ray diffraction patterns. It is found that sintering temperatures and excess Bi2O3 content have large influence on the grain growth, the bulk densities, the maximum dielectric constants, and the Curie temperatures of SrBi2Ta2O9-based ceramics. |
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