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Junctionless MOS-Transistor with a Low Subthreshold Current |
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| Authors: | Korolev M. A. Klyuchnikov A. S. Efimova D. I. |
| Affiliation: | 1.National Research University of Electronic Technology (MIET), 124498, Zelenograd, Moscow, Russia ;2.AO Molecular Electronics Research Institute (MERI), 124460, Zelenograd, Moscow, Russia ; |
| Abstract: | Russian Microelectronics - The junctionless MOS-transistors (junctionless MOSFET) have a number of advantages over conventional transistors in terms of the simplicity of design, manufacturing... |
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