| InAs/InP量子点激光器制备工艺研究 |
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| 引用本文： | 李世国,龚谦,王瑞春,王新中,陈朋,曹春芳,岳丽,刘庆博.InAs/InP量子点激光器制备工艺研究[J].光电子．激光,2012(1):94-97. |
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| 作者姓名： | 李世国 龚谦 王瑞春 王新中 陈朋 曹春芳 岳丽 刘庆博 |
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| 作者单位： | 深圳信息职业技术学院电子通信技术系;中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室;深圳信息职业技术学院电子通信技术系;深圳信息职业技术学院电子通信技术系;中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室;中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室;中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室;中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室 |
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| 基金项目： | 广东省自然科学基金(S2011040001330)资助项目 |
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| 摘 要： | 报道了通过化学湿刻蚀制备窄脊条InAs/InP量子点激光器的方法。激光器脊条主要是由半导体材料InGaAs和InP构成,通过选择合适配比的H2SO4∶H2O2∶H2O和H3PO4∶HCl腐蚀溶液和InP的腐蚀方向,在室温下选择性地腐蚀了InGaAs和InP,获得了窄脊条宽为6μm的量子点激光器。此激光器能够在室温连续波模式下工作,激射波长在光纤通信重要窗口1.55μm,单面最大输出功率超过12mW。
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| 关 键 词： | 激光器 量子点 腐蚀溶液 腐蚀方向 |
Fabricating technique of InAs/InP quantum dot lasers |
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| LI Shi-guo,GONG Qian,WANG Rui-chun,WANG Xing-zhong,CHEN Peng,CAO Chun-fang,YUE Li and LIU Qing-bo.Fabricating technique of InAs/InP quantum dot lasers[J].Journal of Optoelectronics·laser,2012(1):94-97. |
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| Authors: | LI Shi-guo GONG Qian WANG Rui-chun WANG Xing-zhong CHEN Peng CAO Chun-fang YUE Li and LIU Qing-bo |
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| Affiliation: | Dpartment of Electronic Communication and Technology,Shenzhen Institute of Information Technology,Shenzhen 518029,China;State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Science,Shanghai 200050,China;Dpartment of Electronic Communication and Technology,Shenzhen Institute of Information Technology,Shenzhen 518029,China;Dpartment of Electronic Communication and Technology,Shenzhen Institute of Information Technology,Shenzhen 518029,China;State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Science,Shanghai 200050,China;State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Science,Shanghai 200050,China;State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Science,Shanghai 200050,China;State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Science,Shanghai 200050,China |
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| Abstract: | Narrow stripe of InAs/InP quantum dot laser is fabricated by the chemical wet etching method.The materials of stripe are composed of InGaAs and InP in systems of InAs/InP quantum dot laser.A vertical stripe with width of 6 μm is achieved by choosing suitable rate of H2SO4∶H2O2∶H2O and H3PO4∶HCl and etching orientation of InP at room temperature.The laser emits its wavelength in the fiber optical communication region around 1.55 μm under continuous-wave mode.More than 12 mW output power from one facet is obtained at room temperature. |
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| Keywords: | laser quantum dot chemical etching solution etching orientation |
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