| GaN衬底上纳米点阵列的制备及其应用研究 |
| |
| 引用本文： | 王新中,于广辉,李世国. GaN衬底上纳米点阵列的制备及其应用研究[J]. 光电子．激光, 2011, 0(4): 487-490 |
| |
| 作者姓名： | 王新中 于广辉 李世国 |
| |
| 作者单位： | 深圳信息职业技术学院；;中国科学院上海微系统与信息技术研究所；;深圳信息职业技术学院； |
| |
| 基金项目： | 国家自然科学基金资助项目(60876011);广东省自然科学基金(10451802904006046);广东省科技计划资助项目(2010B010800013) |
| |
| 摘 要： | 研究了纳米掩膜在材料外延生长及器件制备中的应用.通过电化学腐蚀和电子束蒸发方法在GaN表面生成Ni和SiO<,2>纳米点阵列,经过等离子体刻蚀在Ni/GaN模板上形成GaN纳米锥形结构;利用氢化物气相外延(HVPE)方法,在SiO<,2>/GaN模板上制备厚膜GaN材料.X射线衍射(XRD)和光致发光(PL)谱测试表明...
|
| 关 键 词： | GaN 阳极Al2O3(AAO) 纳米点阵 氢化物气相外延(HVPE) |
Research on fabrication and application of nanodots on GaN substrate |
| |
| WANG Xin-zhong,YU Guang-hui and LI Shi-guo. Research on fabrication and application of nanodots on GaN substrate[J]. Journal of Optoelectronics·laser, 2011, 0(4): 487-490 |
| |
| Authors: | WANG Xin-zhong YU Guang-hui LI Shi-guo |
| |
| Affiliation: | Shenzhen Institute of Information Technology,Shenzhen 518029,China;;Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China;Shenzhen Institute of Information Technology,Shenzhen 518029,China; |
| |
| Abstract: | This paper investigates nanomask application in gallium nitride epitaxy and device fabrication.The nanodots Ni and SiO2 were obtained by electro-chemical erode and e-beam evaporation.Nanocones were formed on Ni/GaN template using inductively coupled plasma system and the GaN crystal was overgrown on SiO2/GaN template by hydride vapor phase epitaxy(HVPE).It is indicated that SiO2 nanodots can obstruct from dislocations,which will obviously decrease the density of dislocation,and is propitious to ... |
| |
| Keywords: | GaN anodic Al2O3(AAO) nanodot hydride vapor phase epitaxy(HVPE) |
| 本文献已被 CNKI 等数据库收录！ |
| 点击此处可从《光电子．激光》浏览原始摘要信息 |
|
点击此处可从《光电子．激光》下载全文 |
