| C60场效应晶体管的制备及修饰层对器件性能影响的研究 |
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| 引用本文： | 郑宏,程晓曼,闫齐齐,田海军,赵赓,印寿根. C60场效应晶体管的制备及修饰层对器件性能影响的研究[J]. 光电子．激光, 2011, 0(10): 1467-1470 |
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| 作者姓名： | 郑宏 程晓曼 闫齐齐 田海军 赵赓 印寿根 |
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| 作者单位： | 天津理工大学材料物理研究所教育部显示材料及发光器件重点实验室；;天津理工大学理学院；;天津理工大学材料物理研究所教育部显示材料及发光器件重点实验室；;天津理工大学材料物理研究所教育部显示材料及发光器件重点实验室；;天津理工大学理学院；;天津理工大学材料物理研究所教育部显示材料及发光器件重点实验室； |
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| 基金项目： | 国家自然科学基金资助项目(61076065);天津自然科学基金资助项目(07JCYBJC12700) |
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| 摘 要： | 以重掺杂Si片作为衬底，SiOe／聚甲基丙烯酸甲酯（PMMA）为双栅绝缘层，C60为有源层，制备了不同修饰层的有机场效应晶体管（OFETs）；研究了不同修饰层的器件对于场效应性能的影响。实验表明，与未加修饰层的器件相比，经过修饰的器件性能有一定的提高，其中Alqa／LiF双修饰层器件的场效应迁移率达到最大，为1．6×1...
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| 关 键 词： | 有机场效应晶体管(OFETs) 双修饰层 场效应迁移率 |
Fabrication of C60-based organic field effect transistors and effects of buffer layers on the performance of the devices |
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| ZHENG Hong,CHENG Xiao-man,YAN Qi-qi,TIAN Hai-jun,ZHAO Geng and YIN Shou-gen. Fabrication of C60-based organic field effect transistors and effects of buffer layers on the performance of the devices[J]. Journal of Optoelectronics·laser, 2011, 0(10): 1467-1470 |
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| Authors: | ZHENG Hong CHENG Xiao-man YAN Qi-qi TIAN Hai-jun ZHAO Geng YIN Shou-gen |
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| Affiliation: | Key Laboratory of Display Material and Photoelectric Devices,Ministry of Education of China,Institute of Material Physics,Tianjin University of Technology,Tianjin 300384,China;;School of Science,Tianjin University of Technology,Tianjin 300384,China;Key Laboratory of Display Material and Photoelectric Devices,Ministry of Education of China,Institute of Material Physics,Tianjin University of Technology,Tianjin 300384,China;;Key Laboratory of Display Material and Photoelectric Devices,Ministry of Education of China,Institute of Material Physics,Tianjin University of Technology,Tianjin 300384,China;;School of Science,Tianjin University of Technology,Tianjin 300384,China;Key Laboratory of Display Material and Photoelectric Devices,Ministry of Education of China,Institute of Material Physics,Tianjin University of Technology,Tianjin 300384,China; |
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| Abstract: | We have fabricated C60-based n-type organic field-effect transistors(OFETs) with different buffer layers with n-doped silicon substrate as the gate electrode and SiO2/PMMA as the dielectric.The performance of different modified devices is also investigated.Compared with the one without modified layer,the modified ones show a certain improvement and the bi-layer device shows the highest mobility,which is up to 1.6×10-2 cm2/V·s.Furthermore,the operation mechanism of the bi-layer device has been an... |
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| Keywords: | organic field effect transistors(OFETs) double modified layers mobility |
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