| Si基薄膜叠层太阳电池中顶底电池电流匹配的实现 |
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| 引用本文： | 陈培专,陈新亮,蔡宁,韩晓艳,李娟,任慧志,李阳,张晓丹,熊绍珍,赵颖,耿新华. Si基薄膜叠层太阳电池中顶底电池电流匹配的实现[J]. 光电子．激光, 2011, 0(6): 868-871 |
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| 作者姓名： | 陈培专 陈新亮 蔡宁 韩晓艳 李娟 任慧志 李阳 张晓丹 熊绍珍 赵颖 耿新华 |
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| 作者单位： | 南开大学光电子薄膜器件与技术研究所光电子薄膜器件与技术天津市重点实验室光电信息技术科学教育部重点实验室；;南开大学光电子薄膜器件与技术研究所光电子薄膜器件与技术天津市重点实验室光电信息技术科学教育部重点实验室；;南开大学光电子薄膜器件与技术研究所光电子薄膜器件与技术天津市重点实验室光电信息技术科学教育部重点实验室；;南开大学光电子薄膜器件与技术研究所光电子薄膜器件与技术天津市重点实验室光电信息技术科学教育部重点实验室；;南开大学光电子薄膜器件与技术研究所光电子薄膜器件与技术天津市重点实验室光电信息技术科学教育部重点实验室；;南开大学光电子薄膜器件与技术研究所光电子薄膜器件与技术天津市重点实验室光电信息技术科学教育部重点实验室；;南开大学光电子薄膜器件与技术研究所光电子薄膜器件与技术天津市重点实验室光电信息技术科学教育部重点实验室；;南开大学光电子薄膜器件与技术研究所光电子薄膜器件与技术天津市重点实验室光电信息技术科学教育部重点实验室；;南开大学光电子薄膜器件与技术研究所光电子薄膜器件与技术天津市重点实验室光电信息技术科学教育部重点实验室；;南开大学光电子薄膜器件与技术研究所光电子薄膜器件与技术天津市重点实验室光电信息技术科学教育部重点实验室；;南开大学光电子薄膜器件与技术研究所光电子薄膜器件与技术天津市重点实验室光电信息技术科学教育部重点实验室； |
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| 基金项目： | 国家重点基础研究发展计划资助项目(2006CB202602,2006CB202603);国家高技术研究发展计划资助项目(2009AA050602);天津市国家科技计划配套资助项目(07QTPTJC29500);天津市应用基础及前沿技术研究计划资助项目(09JCYBJC06900) |
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| 摘 要： | 以中间层对非晶硅/微晶硅(a-Si/μc-Si)叠层太阳电池电学特性的影响为研究对象,运用太阳能电池模拟软件,计算了中间层折射率和厚度的变化对顶/底电池电流的影响.针对当前Si基薄膜叠层太阳电池中存在的顶、底电池电流不匹配的问题,提供了解决方案.结果表明,应选用折射率小于3.1的材料作中间层;顶、底电池电流完全匹配的中...
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| 关 键 词： | 非晶硅/微晶硅叠层太阳电池 中间层 电学模拟 顶底电池电流匹配 |
Realization of current matching between top cell and bottom cell in Si thin film tandem solar cells |
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| CHEN Pei-zhuan,CHEN Xin-liang,CAI Ning,HAN Xiao-yan,LI Juan,REN Hui-zhi,LI Yang,ZHANG Xiao-dan,XIONG Shao-zhen,ZHAO Ying and GENG Xin-hua. Realization of current matching between top cell and bottom cell in Si thin film tandem solar cells[J]. Journal of Optoelectronics·laser, 2011, 0(6): 868-871 |
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| Authors: | CHEN Pei-zhuan CHEN Xin-liang CAI Ning HAN Xiao-yan LI Juan REN Hui-zhi LI Yang ZHANG Xiao-dan XIONG Shao-zhen ZHAO Ying GENG Xin-hua |
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| Affiliation: | Tianjin Key Laboratory of Photoelectronic Thin Film Devices and Technology & Key Laboratory of Optoelectronic Information Science and Technology of Ministry of Education,Nankai Institute of Photo-electronic Thin Film Devices and Technology,University,Tianjin 300071,China;Tianjin Key Laboratory of Photoelectronic Thin Film Devices and Technology & Key Laboratory of Optoelectronic Information Science and Technology of Ministry of Education,Nankai Institute of Photo-electronic Thin Film Devices and Technology,University,Tianjin 300071,China;Tianjin Key Laboratory of Photoelectronic Thin Film Devices and Technology & Key Laboratory of Optoelectronic Information Science and Technology of Ministry of Education,Nankai Institute of Photo-electronic Thin Film Devices and Technology,University,Tianjin 300071,China;Tianjin Key Laboratory of Photoelectronic Thin Film Devices and Technology & Key Laboratory of Optoelectronic Information Science and Technology of Ministry of Education,Nankai Institute of Photo-electronic Thin Film Devices and Technology,University,Tianjin 300071,China;Tianjin Key Laboratory of Photoelectronic Thin Film Devices and Technology & Key Laboratory of Optoelectronic Information Science and Technology of Ministry of Education,Nankai Institute of Photo-electronic Thin Film Devices and Technology,University,Tianjin 300071,China;Tianjin Key Laboratory of Photoelectronic Thin Film Devices and Technology & Key Laboratory of Optoelectronic Information Science and Technology of Ministry of Education,Nankai Institute of Photo-electronic Thin Film Devices and Technology,University,Tianjin 300071,China;Tianjin Key Laboratory of Photoelectronic Thin Film Devices and Technology & Key Laboratory of Optoelectronic Information Science and Technology of Ministry of Education,Nankai Institute of Photo-electronic Thin Film Devices and Technology,University,Tianjin 300071,China;Tianjin Key Laboratory of Photoelectronic Thin Film Devices and Technology & Key Laboratory of Optoelectronic Information Science and Technology of Ministry of Education,Nankai Institute of Photo-electronic Thin Film Devices and Technology,University,Tianjin 300071,China;Tianjin Key Laboratory of Photoelectronic Thin Film Devices and Technology & Key Laboratory of Optoelectronic Information Science and Technology of Ministry of Education,Nankai Institute of Photo-electronic Thin Film Devices and Technology,University,Tianjin 300071,China;Tianjin Key Laboratory of Photoelectronic Thin Film Devices and Technology & Key Laboratory of Optoelectronic Information Science and Technology of Ministry of Education,Nankai Institute of Photo-electronic Thin Film Devices and Technology,University,Tianjin 300071,China;Tianjin Key Laboratory of Photoelectronic Thin Film Devices and Technology & Key Laboratory of Optoelectronic Information Science and Technology of Ministry of Education,Nankai Institute of Photo-electronic Thin Film Devices and Technology,University,Tianjin 300071,China |
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| Abstract: | Through changing the refractive index and thickness of the interlayer,the influence of the interlayer on the electrical properties of a-Si/uc-Si tandem solar cells is investigated.Based on the problem of current matching top cell and bottom cell in tandem solar cells,the corresponding solution is provided.The results indicate that the refractive index of the interlayer materials should be less than 3.1.The refractive index and thickness are correlated in the case of current matching between top ... |
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| Keywords: | a-Si/μc-Si tandem solar cells interlayer electric simulation current matching between top cell and bottom cell |
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