| 基于电感耦合氧等离子体金刚石膜表面修饰的功率优化 |
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| 引用本文： | 张楷亮,王莎莎,王芳,吴小国,孙大智.基于电感耦合氧等离子体金刚石膜表面修饰的功率优化[J].光电子．激光,2011(7):1034-1037. |
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| 作者姓名： | 张楷亮 王莎莎 王芳 吴小国 孙大智 |
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| 作者单位： | 天津理工大学电子信息工程学院天津市薄膜电子与通信器件重点实验室；;天津理工大学电子信息工程学院天津市薄膜电子与通信器件重点实验室；;天津理工大学电子信息工程学院天津市薄膜电子与通信器件重点实验室；;天津理工大学电子信息工程学院天津市薄膜电子与通信器件重点实验室；;天津理工大学电子信息工程学院天津市薄膜电子与通信器件重点实验室； |
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| 基金项目： | 国家自然基金资助项目(60806030);天津市科技计划资助项目(08JCYBJC14600,10SYSYJC27700);天津市高等学校科技发展基金计划资助项目(ZD200709) |
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| 摘 要： | 采用电感耦合等离子体（ICP）氧等离子体刻蚀金刚石膜,探寻金刚石膜表面处理的方法。通过分析不同ICP射频源功率和不同偏压源功率下的刻蚀速率,研究了金刚石膜刻蚀的机理作用;通过拉曼光谱进行表征,分析刻蚀前后sp2与sp3的含量。结果表明,在ICP氧等离子体刻蚀的过程中,sp3键部分转化为sp2键;刻蚀后表面粗糙度降低;当...
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| 关 键 词： | 金刚石薄膜 等离子体 电感耦合等离子体(ICP) 刻蚀 |
Optimization of etching power for surface-modified diamond films based on inductively coupled oxygen plasma |
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| ZHANG Kai-liang,WANG Sha-sh,WANG Fang,WU Xiao-guo and SUN Da-zhi.Optimization of etching power for surface-modified diamond films based on inductively coupled oxygen plasma[J].Journal of Optoelectronics·laser,2011(7):1034-1037. |
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| Authors: | ZHANG Kai-liang WANG Sha-sh WANG Fang WU Xiao-guo and SUN Da-zhi |
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| Affiliation: | Tianjin Key Laboratory of Film Electronic & Communication Devices,School of Electronics Information Engineering,Tianjin University of Technology,Tianjin 300384,China;Tianjin Key Laboratory of Film Electronic & Communication Devices,School of Electronics Information Engineering,Tianjin University of Technology,Tianjin 300384,China;Tianjin Key Laboratory of Film Electronic & Communication Devices,School of Electronics Information Engineering,Tianjin University of Technology,Tianjin 300384,China;Tianjin Key Laboratory of Film Electronic & Communication Devices,School of Electronics Information Engineering,Tianjin University of Technology,Tianjin 300384,China;Tianjin Key Laboratory of Film Electronic & Communication Devices,School of Electronics Information Engineering,Tianjin University of Technology,Tianjin 300384,China |
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| Abstract: | In this paper,the etching of diamond film is done by inductively coupled oxygen plasma to explore the treatment and modification methods for the diamond film surface.Based on the analysis with different etching rates under different inductively coupled plasma(ICP) RF source power values and bias RF source power values,the etching mechanism is explored.And the relative contents of sp2 and sp3 were characterized by Raman spectra.Etching results show that part of the sp3 bonds change into sp2 bonds... |
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| Keywords: | diamond films plasma inductively coupled plasma(ICP) etching |
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