| 电子束沉积In2O3基W-Mo共掺薄膜的特性研究 |
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| 引用本文： | 任世荣,陈新亮,张存善,李林娜,张德坤,孙建,耿新华,赵颖.电子束沉积In2O3基W-Mo共掺薄膜的特性研究[J].光电子．激光,2011(4):550-554. |
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| 作者姓名： | 任世荣 陈新亮 张存善 李林娜 张德坤 孙建 耿新华 赵颖 |
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| 作者单位： | 南开大学光电子薄膜器件与技术研究所&光电子薄膜器件与技术天津市重点实验室&光电信息技术科学教育部重点实验室； 河北工业大学信息工程学院；;南开大学光电子薄膜器件与技术研究所&光电子薄膜器件与技术天津市重点实验室&光电信息技术科学教育部重点实验室；;河北工业大学信息工程学院；;南开大学光电子薄膜器件与技术研究所&光电子薄膜器件与技术天津市重点实验室&光电信息技术科学教育部重点实验室；;南开大学光电子薄膜器件与技术研究所&光电子薄膜器件与技术天津市重点实验室&光电信息技术科学教育部重点实验室；;南开大学光电子薄膜器件与技术研究所&光电子薄膜器件与技术天津市重点实验室&光电信息技术科学教育部重点实验室；;南开大学光电子薄膜器件与技术研究所&光电子薄膜器件与技术天津市重点实验室&光电信息技术科学教育部重点实验室；;南开大学光电子薄膜器件与技术研究所&光电子薄膜器件与技术天津市重点实验室&光电信息技术科学教育部重点实验室； |
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| 基金项目： | 国家重点基础研究发展计划资助项目(2011CB201605,2011CB201606&2011CB201607);国家高技术研究发展计划资助项目(2009AA050602);天津市应用基础及前沿技术研究计划资助项目(09JCYBJC06900);中央高校基本科研业务费专项资金资助项目(65010341) |
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| 摘 要： | 利用电子束反应沉积技术制备了高迁移率I2O3基W-Mo共掺(IMWO,I<,2>O<,3>:WO<,3>/MoO<,3>)薄膜,研究了不同等量WO<,3>-MoO<,3>掺杂浓度对薄膜的微观结构、光学性能和电学性能的影响.IMWO薄膜的表面形貌呈现"类金字塔"型.随着WO<,3>-MoO<,3>共掺量的增加,IMWO薄...
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| 关 键 词： | 电子束沉积技术 I2O3:WO3/MoO3(IMWO)薄膜 共掺技术 高迁移率 |
Properties of W-Mo co-doped In2O3 thin films grown by electron beam deposition |
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| REN Shi-rong,CHEN Xin-liang,ZHANG Cun-shan,LI Lin-n,ZHANG De-kun,SUN Jian,GENG Xin-hua and ZHAO Ying.Properties of W-Mo co-doped In2O3 thin films grown by electron beam deposition[J].Journal of Optoelectronics·laser,2011(4):550-554. |
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| Authors: | REN Shi-rong CHEN Xin-liang ZHANG Cun-shan LI Lin-n ZHANG De-kun SUN Jian GENG Xin-hua and ZHAO Ying |
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| Affiliation: | Key Laboratory on Optoelectronic Information Science and Technology of MEC,Tianjin Key Laboratory on Photoelectronic Thin Film Devices and Technology,Institute of Photoelectronic Thin Film Devices and Technology,Nankai University,Tianjin 300071,China; School of Information Engineering,Hebei University of Technology,Tianjin 300130,China;Key Laboratory on Optoelectronic Information Science and Technology of MEC,Tianjin Key Laboratory on Photoelectronic Thin Film Devices and Technology,Institute of Photoelectronic Thin Film Devices and Technology,Nankai University,Tianjin 300071,China;;School of Information Engineering,Hebei University of Technology,Tianjin 300130,China;Key Laboratory on Optoelectronic Information Science and Technology of MEC,Tianjin Key Laboratory on Photoelectronic Thin Film Devices and Technology,Institute of Photoelectronic Thin Film Devices and Technology,Nankai University,Tianjin 300071,China;;Key Laboratory on Optoelectronic Information Science and Technology of MEC,Tianjin Key Laboratory on Photoelectronic Thin Film Devices and Technology,Institute of Photoelectronic Thin Film Devices and Technology,Nankai University,Tianjin 300071,China;;Key Laboratory on Optoelectronic Information Science and Technology of MEC,Tianjin Key Laboratory on Photoelectronic Thin Film Devices and Technology,Institute of Photoelectronic Thin Film Devices and Technology,Nankai University,Tianjin 300071,China;;Key Laboratory on Optoelectronic Information Science and Technology of MEC,Tianjin Key Laboratory on Photoelectronic Thin Film Devices and Technology,Institute of Photoelectronic Thin Film Devices and Technology,Nankai University,Tianjin 300071,China;;Key Laboratory on Optoelectronic Information Science and Technology of MEC,Tianjin Key Laboratory on Photoelectronic Thin Film Devices and Technology,Institute of Photoelectronic Thin Film Devices and Technology,Nankai University,Tianjin 300071,China; |
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| Abstract: | Structural,optical and electrical properties of tungsten(W) and molybdenum(Mo) co-doped indium oxide(IMWO) films prepared by electron beam deposition technique with different WO3-MoO3 co-doped concentrations are investigated in detail.The IMWO thin films present pyramid-like surface.With the co-doped concentration increasing,the resistivity and carrier concentration become better.The lowest resistivity ρ~3.66×10-4 Ω·cm is obtained at the co-doped concentration ~1.0%,with the high mobility μ~45.5 cm2·V-1·s-1 and the carrier concentration n~3.74×1 020 cm-3.The optimized transmittance of IMWO films is ~76%(including float glass,i.e.,glass/IMWO) with the light wavelength between 400 nm and 1 100 nm. |
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| Keywords: | electron beam deposition In2O3:WO3/MoO3(IMWO) thin film co-doping technique high mobility |
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