| 生长ZnO薄膜的氧分压对ZnO/PS体系光学性能的影响 |
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| 引用本文： | 黄新丽,马书懿,马李刚,孙爱民.生长ZnO薄膜的氧分压对ZnO/PS体系光学性能的影响[J].光电子．激光,2011(9):1356-1359. |
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| 作者姓名： | 黄新丽 马书懿 马李刚 孙爱民 |
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| 作者单位： | 西北师范大学物理与电子工程学院甘肃省原子分子与功能材料重点实验室；;西北师范大学物理与电子工程学院甘肃省原子分子与功能材料重点实验室；;西北师范大学物理与电子工程学院甘肃省原子分子与功能材料重点实验室；;西北师范大学物理与电子工程学院甘肃省原子分子与功能材料重点实验室； |
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| 基金项目： | 国家自然科学基金资助项目(10874140);甘肃省自然科学基金资助项目(0710RJZA105) |
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| 摘 要： | 采用电化学阳极氧化法,在p型（100）晶向的单晶Si片上制备多孔Si（PS）样品;以PS为衬底,采用射频反应磁控溅射技术在不同O2分压下沉积ZnO薄膜。X射线衍射（XRD）结果显示,所有ZnO/PS复合体系在衍射角为34.24°附近均出现较强的衍射峰,对应于ZnO的（002）晶面,说明样品具有良好的c轴择优取向;但由于...
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| 关 键 词： | 多孔Si(PS) ZnO 射频反应磁控溅射 X射线衍射(XRD) 光致发光(PL) 白光发射 |
Effects of oxygen partial pressure for ZnO film growth on luminescent properties of ZnO/PS nanocomposite systems |
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| HUANG Xin-li,MA Shu-yi,MA Li-gang and SUN Ai-min.Effects of oxygen partial pressure for ZnO film growth on luminescent properties of ZnO/PS nanocomposite systems[J].Journal of Optoelectronics·laser,2011(9):1356-1359. |
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| Authors: | HUANG Xin-li MA Shu-yi MA Li-gang and SUN Ai-min |
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| Affiliation: | Key Laboratory of Atomicand Molecular Physics and Functional Material of Gansu Province,College of Physics and Electronic Engineering,Northwest Normal University,Lanzhou 730070,China;Key Laboratory of Atomicand Molecular Physics and Functional Material of Gansu Province,College of Physics and Electronic Engineering,Northwest Normal University,Lanzhou 730070,China;Key Laboratory of Atomicand Molecular Physics and Functional Material of Gansu Province,College of Physics and Electronic Engineering,Northwest Normal University,Lanzhou 730070,China;Key Laboratory of Atomicand Molecular Physics and Functional Material of Gansu Province,College of Physics and Electronic Engineering,Northwest Normal University,Lanzhou 730070,China |
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| Abstract: | Porous silicon(PS) samples were formed by the electrochemical anodization on the p-type(100) silicon wafer,and ZnO films were deposited on the PS substrates at different oxygen partial pressures by the radio frequency(RF) reactive magnetron sputtering technique.X-ray diffraction(XRD) patterns show that all samples(ZnO/PS) have a diffraction peak at about 34.24° corresponding to the ZnO(002) direction,which indicates that ZnO films have a preferential c-axis orientation,but the full width at half... |
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| Keywords: | porous silicon(PS) ZnO radio frequency(RF) magnetron sputtering X-ray diffraction(XRD) photoluminescence(PL) white emission |
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