Atomic hydrogen assisted molecular beam epitaxy on patterned GaAs (311)A substrates: Formation of highly uniform quantum-dot arrays |
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Authors: | Richard Nötzel Manfred Ramsteiner Zhichuan Niu Achim Trampert Lutz Däweritz Klaus H. Ploog |
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Affiliation: | 1. Paul-Drude-Institut für Festk?rperelektronik, Hausvogteiplatz 5-7, D-10117, Berlin, Germany
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Abstract: | The idea of combining self-organized growth with growth on patterned substrates to produce new types of nanostructures in a controlled manner is realized in atomic hydrogen assisted molecular beam epitaxy (MBE) on patterned GaAs (311)A substrates. In conventional MBE on patterned substrates mesa stripes along [01 ] develop a fast growing sidewall to form quasi-planar lateral quantum wires having a smooth, convex curved surface profile. In atomic hydrogen assisted MBE, the surface naturally develops quasiperiodic one-dimenional step arrays by step bunching along [ 33], i.e., perpendicular to the wire direction with a lateral periodicity around 40 nm. The step array is maintained over the curved sidewall without displacement. Thus, a dense array of dotlike nanostructures is realized with precise control of the position on the substrate surface. High uniformity of the dot array is revealed in micro-photoluminescence spectroscopy with the emission dominated by one single sharp line. |
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Keywords: | Atomic hydrogen assisted molecular beam epitaxy (MBE) high-index substrates patterned growth quantum dot arrays self-organized growth |
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