Mesa-isolated GaAs Schottky-barrier photodiodes

The design, fabrication and characterisation of GaAs Schottky-barrier photodiodes with evaporated, free-standing-metal airbridges is reported. The photodiodes were fabricated using all dry-etching techniques. Anisotropic chemically assisted ion beam etching was used to etch vertical sidewall mesas, and isotropic reactive ion etching was used to etch a lateral tunnel. A free-standing-metal airbridge created by the lateral tunnel etch results in isolation of the active area at the same time providing free-standing-metal interconnection to the contact pad.<>