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Preparation and Electrical Properties of Lanthanum-Doped Lead Titanate Thin Films by Sol–Gel Processing
Authors:Yasuhiro Shimizu  K R Udayakumar  L Eric Cross
Affiliation:Materials Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802
Abstract:Lanthanum-doped lead titanate thin films have been prepared by sol–gel processing. These studies reveal the structural and electrical properties of 18 mol% La-doped PbTiO3 thin films to be dependent on the annealing conditions. With appropriate annealing conditions, a relative dielectric constant of about 900 was obtained, comparable to the bulk composition.
Keywords:lead titanate  sol-gel  thin films  lanthanum  processing
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