Proton incorporation in yttria-stabilized zirconia during atomic layer deposition |
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| Authors: | Kiho Bae Kyung Sik Son Jun Woo Kim Suk Won Park Jihwan An Fritz B. Prinz Joon Hyung Shim |
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| Affiliation: | 1. School of Mechanical Engineering, Korea University, Anam-dong, Seongbuk-gu, Seoul 136-713, Republic of Korea;2. High-temperature Energy Materials Research Center, Korea Institute of Science and Technology (KIST), Hawolgok-dong, Seongbuk-gu, Seoul 136-791, Republic of Korea;3. Department of Mechanical Engineering, Stanford University, Stanford CA 94305, USA;4. Department of Materials Science and Engineering, Stanford University, Stanford CA 94305, USA |
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| Abstract: | This work elucidated the proton-incorporation mechanism in ALD YSZ1. Isotope 2H2O was used as an oxidant to trace proton incorporation. The ratio of ZrO2 to Y2O3 ALD cycles was varied from 1:1 to 5:1. TEM confirmed that the ALD YSZ films grew as fully crystallized columnar grains in the cubic ZrO2 phase. SIMS indicated that the Y3+ and 2H+ concentrations were linearly correlated, indicating yttria-deposition-induced proton incorporation. XPS confirmed an appreciable amount of Y(OH)3 proportional to the 2H+ content in the ALD YSZ, as was also detected by SIMS. Oxide ion vacancies created by the replacement of ZrO2 with relatively small amounts of Y2O3 provided additional vacancies for proton incorporation, resulting in steeper [2H+]/[Y3+] slopes. |
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| Keywords: | Protons Atomic layer deposition Yttria-stabilized zirconia Secondary ion mass spectrometry |
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