Growth of HgTe Quantum Wells for IR to THz Detectors |
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| Authors: | S Dvoretsky N Mikhailov Yu Sidorov V Shvets S Danilov B Wittman S Ganichev |
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| Affiliation: | (1) Nanophotonics, School of Engineering-Emerging Technologies, University of Tabriz, Bolv. 29, Bahman, 51666 Tabriz, Iran;(2) Nanophotonics, School of Engineering-Emerging Technologies, University of Tabriz, Emam Khomeini Bolv. 29, Bahman, 51666 Tabriz, Iran;(3) Faculty of Electrical and Computer Engineering, University of Tabriz, Emam Khomeini Bolv. 29, Bahman, 51666 Tabriz, Iran; |
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| Abstract: | We zone-engineered HgCdTe/HgTe/HgCdTe quantum wells (QWs) using the molecular-beam epitaxy (MBE) method with in situ high-precision ellipsometric control of composition and thickness. The variations of ellipsometric parameters in the ψ–Δ
plane were represented by smooth broken curves during HgTe QW growth with abrupt composition changes. The form of the spiral
fragments and their extensions from fracture to fracture revealed the growing layer composition and its thickness. Single
and multiple (up to 30) Cd
x
Hg1−x
Te/HgTe/Cd
x
Hg1−x
Te QWs with abrupt changes of composition were grown reproducibly on (013) GaAs substrates. HgTe thickness was in the range
of 16 nm to 22 nm, with the central portion of Cd
x
Hg1−x
Te spacers doped by In to a concentration of 1014 cm−3 to 1017 cm−3. Based on this research, high-quality (013)-grown HgTe QW structures can be used for all-electric detection of radiation
ellipticity in a wide spectral range, from far-infrared (terahertz radiation) to mid-infrared wavelengths. Detection was demonstrated
for various low-power continuous-wave (CW) lasers and high-power THz pulsed laser systems. |
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