Photoconductive Emission and Detection of Terahertz Pulsed Radiation Using Semiconductors and Semiconductor Devices |
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| Authors: | Masahiko Tani Kohji Yamamoto Elmer S. Estacio Christopher T. Que Hidekazu Nakajima Masakazu Hibi Fumiaki Miyamaru Seizi Nishizawa Masanori Hangyo |
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| Affiliation: | (1) Research Center for Development of Far-Infrared Region, University of Fukui, 3-9-1 Bunkyo, Fukui 910-8507, Japan;(2) Department of Physics, Faculty of Science, Shinshu University, Asahi 3-1-1, Matsumoto Nagano, 390-8621, Japan;(3) Advanced Infrared Spectroscopy Co., Ltd, 3-17-16, Sennin, Hachioji Tokyo, 193-0835, Japan;(4) Institute of Laser Engineering, Osaka University, 2-6 Yamadaoka, Suita Osaka, 565-0871, Japan |
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| Abstract: | Recent studies on the techniques and development of photoconductive (PC) semiconductor devices for efficient generation and detection of terahertz (THz) pulsed radiation are reported. Firstly, the optimization of PC antenna design is discussed. The PC detection of THz pulsed radiation using low-temperature grown GaAs with 1.55-μm wavelength probe is then described. Finally, the enhancement of THz radiation from InSb by using a coupling lens and magnetic field is investigated. These results reveal valuable insights on the design of an efficient, compact, and cost-effective THz time-domain spectroscopy system based on 1.55-μm fs laser sources. |
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