| AlGaInP/GaAs异质结双极晶体管直流特性研究 |
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| 引用本文： | 李冰寒,刘文超,周健,夏冠群. AlGaInP/GaAs异质结双极晶体管直流特性研究[J]. 功能材料与器件学报, 2003, 9(3): 327-332 |
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| 作者姓名： | 李冰寒 刘文超 周健 夏冠群 |
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| 作者单位： | 中国科学院上海微系统与信息技术研究所,上海,200050 |
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| 摘 要： | 制备了大尺寸AlGaInP／GaAs SHBT和DHBT，对其直流特性进行了测试，并分析了AlGaInP／GaA。单异质结晶体管(SHBT)和双异质结晶体管(DHBT)的直流特性差异，深入研究了影响AlGaInP／GaAsHBT开启电压(Voffset)的各个因素。结果表明：AlGaInP／GaAsHBT开启电压与外加基极电流密切相关，采用宽发射区可大大降低器件的开启电压。
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| 关 键 词： | AlGaInP／GaAs 异质结双极晶体管 直流特性 开启电压 SHBT DHBT |
| 文章编号： | 1007-4252(2003)03-0327-06 |
| 修稿时间： | 2002-10-18 |
DC performance of AlGaInP/GaAs HBT |
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| LI Bing- han,LIU Wen- chao,ZHOU Jian,XIA Guan- qun. DC performance of AlGaInP/GaAs HBT[J]. Journal of Functional Materials and Devices, 2003, 9(3): 327-332 |
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| Authors: | LI Bing- han LIU Wen- chao ZHOU Jian XIA Guan- qun |
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| Abstract: | Large- scale Heterojunction Bipolar Transistors were fabricated by using AlGaInP/GaAs HBT material grown by MOCVD. DC characteristics of AlGaInP/GaAs SHBT and AlGaInP/GaAs DHBT were studied. In addition, the collector- emitter offset voltages of AlGaInP/GaAs HBT were investigated, and several electrical factors affecting the offset voltage were discussed in detail. The results show that the collector- emitter offset voltages of AlGaInP/GaAs HBT are closely related to base current. And the collector- emitter offset voltage of AlGaInP/GaAs HBT can be decreased greatly by adopted wide emitter. |
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| Keywords: | HBT AlGaInP/GaAs DC characteristics collector- emitter offset voltage |
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