Formation and characteristics of lead lanthanum zirconium titanate thin films formed by using the r.f. sputtering method

PLZT (lead lanthanum zirconium titanate) thin films were prepared by using the r.f. magnetron sputtering method and post-annealing for crystallization at 650 C. The films which were annealed at 650 C for 10 min consisted of a metastable phase and a stable phase. However, another film which was annealed at 650 C for 20 min had only stable perfect perovskite phase. The stability of the post-annealed thin film and substrate interfaces was observed by using scanning electron microscopy. The longer the annealing time, the more unstable were the interfaces. By analysing the EDX data, the composition difference between the sputtering target and thin films, and the composition variation between as-deposited and post-annealed PLZT were studied. The films annealed at 650 C for 20 min showed good ferroelectric and electrical properties with a remanent polarization (P _r) of 11.5 C cm^–2, and a coercive field (E _c) of 164 kV cm^–1.