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Voltammetric and galvanostatic studies of hydrous and anhydrous iridium oxide films
Authors:M Vukovi?
Affiliation:(1) Laboratory of Electrochemistry and Surface Phenomena, Ruder Boscaronkovicacute Institute, Zagreb, Croatia Yugoslavia
Abstract:Electrolytically grown hydrous oxide films on iridium wire electrodes have been thermally treated from 473 to 773 K. Anhydrous oxide films formed by this treatment have been subjected to cathodic polarization at the potential of the hydrogen evolution reaction, square-wave pulsing of potential from –0.25 to +1.25 V with respoect to SCE and to anodic galvanostatic polarization in 0.5 mol dm–3 H2SO4. Cathodic pretreatment caused an increase of the voltammetric charge in the oxide formation region while the square-wave pulsing formed a hydrous oxide film whose voltammetric charge was superimposed on the charge of the anhydrous oxide film. Both procedures restored the hydrophilic nature of the electrode/solution interface. Potential-time curves during anodic galvanostatic polarization served as a diagnostic criterion for the stability and the state of the oxide film.
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