A 1.0 V power supply, 9.3 GB/s write speed, Single-Cell Self-Boost program scheme for high performance ferroelectric NAND flash SSD |
| |
| Authors: | Kousuke Miyaji Shinji NodaTeruyoshi Hatanaka Mitsue Takahashi Shigeki Sakai Ken Takeuchi |
| |
| Affiliation: | a Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
b National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan |
| |
| Abstract: | A Single-Cell Self-Boost (SCSB) program scheme is proposed to achieve a 1.0 V power supply operation in Ferroelectric (Fe-) NAND flash memories. The proposed SCSB scheme only self-boosts the channel voltage of the cell to which the program voltage VPGM is applied in the program-inhibit NAND string. The program disturb is well suppressed at the 1.0 V power supply voltage in the proposed program scheme. The power consumption of the Fe-NAND at VCC = 1.0 V decreases by 86% compared with the conventional floating gate (FG-) NAND at VCC = 1.8 V without the degradation of the write speed. The number of NAND chips written simultaneously in Solid-State Drives (SSD) increases by 6.7 times and the 9.3 GB/s write throughput of the Fe-NAND SSD is achieved for an enterprise application. |
| |
| Keywords: | Ferroelectric NAND flash memory Program disturb Self-boost Low power High performance solid-state drive |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
