A nonvolatile semiconductor memory device in 6H-SiC for harsh environment applications |
| |
Authors: | Ce Li Duster J.S. Kornegay K.T. |
| |
Affiliation: | Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA; |
| |
Abstract: | An electrically erasable programmable read-only memory (EEPROM) cell fabricated on a 6H-SiC substrate is reported. It is the first fully functional SiC EEPROM device. This device uses a generic double-polysilicon-gate configuration. It has been tested at both room temperature and elevated temperatures, up to 200/spl deg/C, to demonstrate full programmability. The threshold voltage shifts between programmed and erased states, at all tested temperatures, are larger than 4.5 V. In both states, the device functions satisfactorily as an n-type MOSFET. Charge retention time is more than 24 h at room temperature. |
| |
Keywords: | |
|
|